SAINT

4/10(목) 전문가초청특강은 KIST 황도경 책임연구원님을 모시고 진행합니다.

관심있는 분들의 많은 참석 부탁드립니다.

ㅁ주제: Fermi-Level Pinning-Free 2D Electronic and Optoelectronic Devices

ㅁ일시: 04/10(목) 16:00

ㅁ장소: 제2종합연구동 83188호

ㅁ약력:

    ○ 소속: 양자기술연구단, 차세대반도체연구소, 한국과학기술연구원
                   KU-KIST 융합대학원, 고려대학교

    ○ 학력: 1999.03 - 2003.02: 연세대학교 재료공학부 학사
                   2003.03 - 2008.02: 연세대학교 물리 및 응용 물리 사업단, 박사

    ○ 경력: 2008.03 - 2009.02: 한국과학기술연구원, Post-doc
                  2009.03 - 2012.07: Georgia Institute of Technology, Post-doc
                  2012.08 – 2019.02: 한국과학기술연구원, 선임연구원
                  2019.03 – 현재: 한국과학기술연구원, 책임연구원

    ○ 연구주제: 차세대 저차원 반도체 기반 전자소자 및 광전소자 연구

ㅁ초록:

Two-dimensional (2D) van der Waals (vdW) semiconductors possess exceptional electronic,
optical, and mechanical properties, attributed to their atomic-scale thickness and unique layered
structures. These characteristics make them a key platform for advancing electronic and
optoelectronic applications. However, a fundamental challenge is the strong Fermi-level
pinning at metal–2D semiconductor interfaces, which severely limits the tunability of Schottky
barriers and hinders device performance. In this talk, I will first introduce the creation of clean
vdW contacts using Cl–SnSe2, a 2D metal with a high work function, as the electrode. These
contacts exhibit Fermi-level depinning at the metal–semiconductor interface, leading to nearideal
Schottky barrier heights (SBHs) that follow the Schottky–Mott limit. This enables tunable
carrier polarity, a capability not previously achieved with other reported vdW 2D metal contacts
in 2D transistors. Next, I will present a conductive-bridge interlayer contact that simultaneously
achieves Fermi-level depinning and low resistance. This approach involves an oxide interlayer
that decouples the metal and semiconductor, while embedded gold nanoclusters within the
interlayer serve as conductive pathways to facilitate efficient charge transport. These
demonstrations of Fermi-level pinning-free contacts open new avenues for the realization of
high-performance next-generation 2D electronics and optoelectronics.