SAINT

05/28 (목) 전문가초청특강은 가천대학교 진강태 교수님을 모시고 진행합니다.

관심있는 분들의 많은 참석 부탁드립니다.

ㅁ주제:  Dimensional Scaling of Topological Transition Metal Phosphides for Advanced Interconnect

ㅁ일시: 05/28 (목) 16:00

ㅁ장소: 제2종합연구동 83188호

ㅁ약력: 

ㅁ초록:

The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in the continued downscaling of integrated circuits as it leads to unacceptable signal delays and power consumption in computing. The resistivity of conventional metals (Cu, Ru, Co) increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Thus, future energy-efficient computing technologies require breakthroughs in interconnect technologies, particularly in new class of interconnect materials. Transition Metal Phosphides are promising materials for low-dissipation on-chip interconnects. 1-4 By using atomic-layer conversion, we demonstrate that the resistivity scaling of metal nanowires/films is competitive to those of effective Cu with barrier/liner and barrier-less Ru interconnects, suggesting transition metal phosphide is an attractive alternative for the current scaling challenges of Cu interconnects.