SAINT

06/04 (목) 전문가초청특강은 서울대학교 이철호 교수님을 모시고 진행합니다.

관심있는 분들의 많은 참석 부탁드립니다.

ㅁ주제:  Atomically Thin 2D Semiconductor Electronics
              toward Beyond-CMOS Technology

ㅁ일시: 06/04 (목) 16:00

ㅁ장소: 제2종합연구동 83188호

ㅁ약력: 

I. PROFESSIONAL EXPERIENCES
   - 2025.09– | Professor, Department of Electrical and Computer Engineering, Seoul National University, Seoul, Korea
   - 2024.10– | Associate Editor, ACS Materials Letters, American Chemical Society (ACS), U.S.A.
   - 2023.03–2025.08 | Associate Professor, Department of Electrical and Computer Engineering, Seoul National University, Seoul, Korea
   - 2014.03–2023.02 | Assistant & Associate Professor, KU-KIST Graduate School of Converging Science and Technology & Department of Integrative Energy Engineering, Korea University, Seoul, Korea
   - 2020.02–2020.08 | Visiting Professor, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, U.S.A.
   - 2011.10–2014.02 | Postdoctoral Research Scientist, Department of Physics & Chemistry, Columbia University, New York, U.S.A.
                *Co-advisors: Prof. Philip Kim (Physics) & Prof. Colin Nuckolls (Chemistry)
   - 2006.08–2007.07 | Visiting Scholar, Department of Physics, Columbia University, New York, U.S.A.
   - 2005.09–2011.09 | Researcher, National Creative Research Initiative Center for Semiconductor Nanorods, Department of Materials Science and Engineering, POSTECH & Department of Physics and Astronomy, Seoul National University, Korea

II. EDUCATION
   - 2005.09–2011.08 | Ph. D, Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Korea
            * Advisor: Prof. Gyu-Chul Yi (Department of Physics and Astronomy, Seoul National University)
   - 1999.03–2005.08 | B.S., Materials Science and Engineering, POSTECH, Korea

ㅁ초록:

Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs), have emerged as promising channel materials for beyond-CMOS electronics owing to their atomically thin bodies, excellent electrostatic control, and strong immunity to short-channel effects at the ultimate scaling limit. Beyond device scaling, their van der Waals layered nature and low thermal budget make them particularly attractive for back-end-of-line (BEOL)-compatible monolithic 3D (M3D) integration.
In this talk, I will discuss the opportunities and challenges of employing 2D semiconductors as post-silicon channel materials for future CMOS technologies and BEOL-compatible M3D integration. Particular emphasis will be placed on the key material and device bottlenecks that currently limit their large-scale adoption, including doping, contacts, and dielectric integration. Finally, I will highlight recent advances from our group that address these challenges through remote modulation doping, pinning-free contacts, and engineered gate stacks for high-performance 2D electronics.