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  • YOO, WON JONG 홈페이지 바로가기

Research Interest

Materials and Device Processes Using Graphene and 2 Dimensional Nano Structures 
Investigation of Memory Property Using 2 Dimensional Nano-Structures 
Plasma Surface Treatment of 2 Dimensional Materials 
Fabrication of Functional Devices Using 2 Dimensional Materials


  • (Ph.D.) Rensselaer Polytechnic Institute, Department of Materials Engineering

Journal Article

  • (2022)  Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects.  ADVANCED MATERIALS.  34,  15
  • (2022)  Comprehensive Modulation of Conductance Anisotropy in Low-Symmetry ReS2 Transistors.  PHYSICAL REVIEW APPLIED.  17,  4
  • (2022)  Ultrahigh Anisotropic Transport Properties of Black Phosphorus Field Effect Transistors Realized by Edge Contact.  ADVANCED ELECTRONIC MATERIALS.  8,  3
  • (2022)  Identifying the Transition Order in an Artificial Ferroelectric van der Waals Heterostructure.  NANO LETTERS.  22,  3
  • (2022)  Edge Rich Ultrathin Layered MoS2 Nanostructures for Superior Visible Light Photocatalytic Activity.  LANGMUIR.  38,  4
  • (2022)  Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning.  JOURNAL OF MATERIALS CHEMISTRY C.  10,  3
  • (2022)  Contact Resistivity in Edge-Contacted Graphene Field Effect Transistors.  ADVANCED ELECTRONIC MATERIALS.  8,  5
  • (2021)  Controlling Carrier Transport in Vertical MoTe2/MoS2 van der Waals Heterostructures.  ACS APPLIED MATERIALS & INTERFACES.  13,  45
  • (2021)  Electrical characterization of 2D materials-based field-effect transistors.  2D MATERIALS.  8,  1
  • (2021)  High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide.  NATURE ELECTRONICS.  4,  10
  • (2021)  Chemical Dopant-Free Doping by Annealing and Electron Beam Irradiation on 2D Materials.  ADVANCED ELECTRONIC MATERIALS.  7,  10
  • (2021)  Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect transistors.  2D MATERIALS.  8,  4
  • (2021)  High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n junctions.  APPLIED PHYSICS LETTERS.  118,  23
  • (2021)  Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2.  2D MATERIALS.  8,  3
  • (2021)  Resonant tunnelling diodes based on twisted black phosphorus homostructures.  NATURE ELECTRONICS.  4,  4
  • (2021)  Interface state density and barrier height improvement in ammonium sulfide treated Al2O3/Si interfaces.  CURRENT APPLIED PHYSICS.  26,  1
  • (2021)  Fermi-Level Pinning Free High-Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts.  ADVANCED ELECTRONIC MATERIALS.  7,  5
  • (2021)  Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices.  ACS APPLIED MATERIALS & INTERFACES.  13,  1
  • (2020)  Charge Density Depinning in Defective MoTe(2)Transistor by Oxygen Intercalation.  ADVANCED FUNCTIONAL MATERIALS.  30,  50
  • (2020)  Control of the Schottky Barrier and Contact Resistance at Metal-WSe(2)Interfaces by Polymeric Doping.  ADVANCED ELECTRONIC MATERIALS.  6,  10


  • (2014)  Two-Dimensional Carbon: Fundamental Properties, Synthesis, Characterization, and Applications, Chapter 10 Photonic Properties of Graphene Devices.  Pan Stanford Publishing.  Co-author
  • (2012)  NONVOLATILE MEMORIES-Materials, Devices and Applications Edited by Tseung-Yuen Tseng and Simon M. Sze.  AMERICAN SCIENTIFIC PUBLISHERS.  Co-author

Patent/Intellectual Property

  • 반도체 소자 및 이의 제조 방법.  10-2019-0075960.  20201127.  KOREA, REPUBLIC OF
  • 터널링 소자 및 그 제조방법.  10-2013-0083154.  20200407.  KOREA, REPUBLIC OF
  • Electronic device including laterally arranged P-type and N-type regions in a two dimensional (2D) material layer and method of manufacturing the same.  14/554363.  20170509.  UNITED STATES
  • Method and apparatus for restoring properties of graphene.  13/864732.  20170509.  UNITED STATES
  • 인버터 소자 및 이의 제조 방법.  10-2015-0068122 .  20170102.  KOREA, REPUBLIC OF
  • 인버터 소자 및 이의 제조 방법.  10-2015-0068122 .  20170102.  KOREA, REPUBLIC OF
  • Tunneling devices and methods of manufacturing the same.  14/188862.  20160223.  UNITED STATES
  • Photodetector using graphene and method of manufacturing the same.  13/747920.  20160216.  UNITED STATES
  • 광 검출기와 그 제조 및 동작 방법.  10-2011-0146101.  20151013.  KOREA, REPUBLIC OF
  • 그래핀 물성 복귀 방법 및 장치.  10-2012-0089736.  20150922.  KOREA, REPUBLIC OF
  • 복합 투명 전극을 포함하는 그래핀 기반 포토 디텍터와 그 제조방법 및 포토 디텍터를 포함하는 장치.  10-2011-0121729.  20150721.  KOREA, REPUBLIC OF
  • Graphene-based photodetector including complex transparent electrode, method of manufacturing the same, and device including the same.  US 13/613,279.  20150630.  UNITED STATES
  • 2차원 소재 적층 플렉서블 광센서.  10-2013-0016972.  20150623.  KOREA, REPUBLIC OF
  • 그래핀과 상변화 물질을 포함하는 불휘발성 메모리 소자와 그 제조 및 동작방법.  10-2011-0061804.  20150623.  KOREA, REPUBLIC OF
  • 그래핀을 이용한 광검출기와 그 제조방법.  10-2012-0044667.  20150623.  KOREA, REPUBLIC OF
  • 그래핀을 이용한 논리소자와 그 제조 및 동작방법.  10-2012-0006412.  20150623.  KOREA, REPUBLIC OF
  • 분리형 집광 태양전지 시스템.  10-2009-0015440.  20150224.  KOREA, REPUBLIC OF
  • 반도체 기판의 비아 형성방법.  10-2009-0016724.  20110519.  KOREA, REPUBLIC OF
  • 나노 와이어의 제조방법.  10-2009-0016717.  20110330.  KOREA, REPUBLIC OF

Conference Paper

  • (2021)  Fermi level pinning at the edge contact of WSe2 field-effect transistors.  ICAMD 2021.  KOREA, REPUBLIC OF
  • (2021)  Chemical-free doping by oxidation and e-beam irradiation on 2D FETs.  ICAMD 2021.  KOREA, REPUBLIC OF
  • (2021)  Anisotropic carrier transport of black phosphorus using 2D surface and 1D edge contacts.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Anomalous electrical transport of edge contact WSe2 Field-effect transistors.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Oxygen Plasma Doped WSe2 and MoS2 Based p-n Heterojunction for Self-Biased Photodetection in Visible and Near-IR range.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Probing Interface Trap Density in layered-WSe2 and Their Impact on Device Characteristics.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Nature of electronic states in monolayer and multilayers molybdenum ditelluride field effect transistors.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Contact resistance of p-doped WSe2 field-effect transistor undergone O2 plasma treatment.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Failure analysis of metallic contacts observed in 2-D semiconductors.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Interface traps in Metal-insulator-graphene field effect transistor.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Normalization of edge contact resistance in graphene field-effect transistors.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Standardization of graphene and 2D materials.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Standardization on the characterization of 2D materials-based electronic devices.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Doping mechanism of annealing and electron beam irradiation on 2D materials.  RPGR 2021.  KOREA, REPUBLIC OF
  • (2021)  Plasma-treated WSe2 and MoS2 Based Vertical Hetero pn-junction for Visible and Near Infrared Photodetection.  2021년도 대한금속재료학회 춘계학술대회.  KOREA, REPUBLIC OF
  • (2021)  열처리와 전자 빔 조사를 통한 MoTe2의 도핑.  2021년도 대한금속재료학회 춘계학술대회.  KOREA, REPUBLIC OF
  • (2021)  Control of Fermi-level pinning at the hybrid interface between metals and 2D materials.  2021년도 대한금속재료학회 춘계학술대회.  KOREA, REPUBLIC OF
  • (2021)  Density of Interface States in Layered-WSe2 Semiconductor.  GrapheneforUS 2021.  UNITED STATES
  • (2021)  Fermi-level de-pinning at the intrinsic WSe2-metal junction via van der Waals bottom contacts.  GrapheneforUS 2021.  UNITED STATES
  • (2021)  Doping effect of Oxidized Molybdenum Ditelluride by Ultraviolet Ozone treatment.  제 60회 한국진공학회 동계정기학술대회.  KOREA, REPUBLIC OF