Materials and Device Processes Using Graphene and 2 Dimensional Nano Structures
Investigation of Memory Property Using 2 Dimensional Nano-Structures
Plasma Surface Treatment of 2 Dimensional Materials
Fabrication of Functional Devices Using 2 Dimensional Materials
Education
(Ph.D.) Rensselaer Polytechnic Institute, Department of Materials Engineering
(2022)
Comprehensive Modulation of Conductance Anisotropy in Low-Symmetry ReS2 Transistors.
PHYSICAL REVIEW APPLIED.
17,
4
(2022)
Ultrahigh Anisotropic Transport Properties of Black Phosphorus Field Effect Transistors Realized by Edge Contact.
ADVANCED ELECTRONIC MATERIALS.
8,
3
(2022)
Identifying the Transition Order in an Artificial Ferroelectric van der Waals Heterostructure.
NANO LETTERS.
22,
3
(2022)
Edge Rich Ultrathin Layered MoS2 Nanostructures for Superior Visible Light Photocatalytic Activity.
LANGMUIR.
38,
4
(2022)
Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning.
JOURNAL OF MATERIALS CHEMISTRY C.
10,
3
(2022)
Contact Resistivity in Edge-Contacted Graphene Field Effect Transistors.
ADVANCED ELECTRONIC MATERIALS.
8,
5
(2021)
Controlling Carrier Transport in Vertical MoTe2/MoS2 van der Waals Heterostructures.
ACS APPLIED MATERIALS & INTERFACES.
13,
45
(2021)
High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide.
NATURE ELECTRONICS.
4,
10
(2021)
Chemical Dopant-Free Doping by Annealing and Electron Beam Irradiation on 2D Materials.
ADVANCED ELECTRONIC MATERIALS.
7,
10
(2021)
Analytical measurements of contact resistivity in two-dimensional WSe2 field-effect transistors.
2D MATERIALS.
8,
4
(2021)
High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p-n junctions.
APPLIED PHYSICS LETTERS.
118,
23
(2021)
Traps at the hBN/WSe2 interface and their impact on polarity transition in WSe2.
2D MATERIALS.
8,
3
(2021)
Resonant tunnelling diodes based on twisted black phosphorus homostructures.
NATURE ELECTRONICS.
4,
4
(2021)
Interface state density and barrier height improvement in ammonium sulfide treated Al2O3/Si interfaces.
CURRENT APPLIED PHYSICS.
26,
1
(2021)
Fermi-Level Pinning Free High-Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts.
ADVANCED ELECTRONIC MATERIALS.
7,
5
(2021)
Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices.
ACS APPLIED MATERIALS & INTERFACES.
13,
1
(2020)
Charge Density Depinning in Defective MoTe(2)Transistor by Oxygen Intercalation.
ADVANCED FUNCTIONAL MATERIALS.
30,
50
(2020)
Control of the Schottky Barrier and Contact Resistance at Metal-WSe(2)Interfaces by Polymeric Doping.
ADVANCED ELECTRONIC MATERIALS.
6,
10
Publications
(2014)
Two-Dimensional Carbon: Fundamental Properties, Synthesis, Characterization, and Applications, Chapter 10 Photonic Properties of Graphene Devices.
Pan Stanford Publishing.
Co-author
(2012)
NONVOLATILE MEMORIES-Materials, Devices and Applications
Edited by Tseung-Yuen Tseng and Simon M. Sze.
AMERICAN SCIENTIFIC PUBLISHERS.
Co-author
Patent/Intellectual Property
반도체 소자 및 이의 제조 방법.
10-2019-0075960.
20201127.
KOREA, REPUBLIC OF
터널링 소자 및 그 제조방법.
10-2013-0083154.
20200407.
KOREA, REPUBLIC OF
Electronic device including laterally arranged P-type and N-type regions in a two dimensional (2D) material layer and method of manufacturing the same.
14/554363.
20170509.
UNITED STATES
Method and apparatus for restoring properties of graphene.
13/864732.
20170509.
UNITED STATES
인버터 소자 및 이의 제조 방법.
10-2015-0068122 .
20170102.
KOREA, REPUBLIC OF
인버터 소자 및 이의 제조 방법.
10-2015-0068122 .
20170102.
KOREA, REPUBLIC OF
Tunneling devices and methods of manufacturing the same.
14/188862.
20160223.
UNITED STATES
Photodetector using graphene and method of manufacturing the same.
13/747920.
20160216.
UNITED STATES
광 검출기와 그 제조 및 동작 방법.
10-2011-0146101.
20151013.
KOREA, REPUBLIC OF
그래핀 물성 복귀 방법 및 장치.
10-2012-0089736.
20150922.
KOREA, REPUBLIC OF
복합 투명 전극을 포함하는 그래핀 기반 포토 디텍터와 그 제조방법 및 포토 디텍터를 포함하는 장치.
10-2011-0121729.
20150721.
KOREA, REPUBLIC OF
Graphene-based photodetector including complex transparent electrode, method of manufacturing the same, and device including the same.
US 13/613,279.
20150630.
UNITED STATES
2차원 소재 적층 플렉서블 광센서.
10-2013-0016972.
20150623.
KOREA, REPUBLIC OF
그래핀과 상변화 물질을 포함하는 불휘발성 메모리 소자와 그 제조 및 동작방법.
10-2011-0061804.
20150623.
KOREA, REPUBLIC OF
그래핀을 이용한 광검출기와 그 제조방법.
10-2012-0044667.
20150623.
KOREA, REPUBLIC OF
그래핀을 이용한 논리소자와 그 제조 및 동작방법.
10-2012-0006412.
20150623.
KOREA, REPUBLIC OF
분리형 집광 태양전지 시스템.
10-2009-0015440.
20150224.
KOREA, REPUBLIC OF
ANTI-REFLECTION STRUCTURE USING SURFACE PLASMON AND HIGH-K DIELECTRIC MATERIAL AND METHOD OF MANUFACTURING THE ANTI-REFLECTION STRUCTURE.
13/064,290.
20150210.
UNITED STATES
반도체 기판의 비아 형성방법.
10-2009-0016724.
20110519.
KOREA, REPUBLIC OF
나노 와이어의 제조방법.
10-2009-0016717.
20110330.
KOREA, REPUBLIC OF
Conference Paper
(2021)
Fermi level pinning at the edge contact of WSe2 field-effect transistors.
ICAMD 2021.
KOREA, REPUBLIC OF
(2021)
Chemical-free doping by oxidation and e-beam irradiation on 2D FETs.
ICAMD 2021.
KOREA, REPUBLIC OF
(2021)
Anisotropic carrier transport of black phosphorus using 2D surface and 1D edge contacts.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Anomalous electrical transport of edge contact WSe2 Field-effect transistors.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Oxygen Plasma Doped WSe2 and MoS2 Based p-n Heterojunction for Self-Biased Photodetection in Visible and Near-IR range.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Probing Interface Trap Density in layered-WSe2 and Their Impact on Device Characteristics.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Nature of electronic states in monolayer and multilayers molybdenum ditelluride field effect transistors.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Contact resistance of p-doped WSe2 field-effect transistor undergone O2 plasma treatment.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Failure analysis of metallic contacts observed in 2-D semiconductors.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Interface traps in Metal-insulator-graphene field effect transistor.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Normalization of edge contact resistance in graphene field-effect transistors.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Standardization of graphene and 2D materials.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Standardization on the characterization of 2D materials-based electronic devices.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Doping mechanism of annealing and electron beam irradiation on 2D materials.
RPGR 2021.
KOREA, REPUBLIC OF
(2021)
Plasma-treated WSe2 and MoS2 Based Vertical Hetero pn-junction for Visible and Near Infrared Photodetection.
2021년도 대한금속재료학회 춘계학술대회.
KOREA, REPUBLIC OF
(2021)
열처리와 전자 빔 조사를 통한 MoTe2의 도핑.
2021년도 대한금속재료학회 춘계학술대회.
KOREA, REPUBLIC OF
(2021)
Control of Fermi-level pinning at the hybrid interface between metals and 2D materials.
2021년도 대한금속재료학회 춘계학술대회.
KOREA, REPUBLIC OF
(2021)
Density of Interface States in Layered-WSe2 Semiconductor.
GrapheneforUS 2021.
UNITED STATES
(2021)
Fermi-level de-pinning at the intrinsic WSe2-metal junction via van der Waals bottom contacts.
GrapheneforUS 2021.
UNITED STATES
(2021)
Doping effect of Oxidized Molybdenum Ditelluride by Ultraviolet Ozone treatment.
제 60회 한국진공학회 동계정기학술대회.
KOREA, REPUBLIC OF
