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ABOUT SAINT

Professors

  • Professor
  • LEE, SUNG JOO 홈페이지 바로가기

Education

  • (Ph.D.) University of Texas at Austin, Electrical Engineering

Journal Article

  • (2021)  Two-Dimensional MXene Synapse for Brain-Inspired Neuromorphic Computing.  SMALL.  17,  1
  • (2021)  Complementary Driving between 2D Heterostructures and Surface Functionalization for Surpassing Binary Logic Devices.  ACS APPLIED MATERIALS & INTERFACES.  13,  1
  • (2021)  Fabrication of van der Waals heterostructures through direct growth of rhenium disulfide on van der Waals surfaces.  APPLIED SURFACE SCIENCE.  544,  1
  • (2021)  High-responsivity PtSe2 photodetector enhanced by photogating effect.  APPLIED PHYSICS LETTERS.  118,  1
  • (2021)  Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface Covalent Functionalization with Diazonium.  ACS NANO.  15,  1
  • (2020)  A-D-A Type Semiconducting Small Molecules with Bis(alkylsulfanyl)methylene Substituents and Control of Charge Polarity for Organic Field-Effect Transistors.  ACS APPLIED MATERIALS & INTERFACES.  12,  37
  • (2020)  MXenes for future nanophotonic device applications.  NANOPHOTONICS.  9,  7
  • (2020)  2D MXene-TiO2 Core-Shell Nanosheets as a Data-Storage Medium in Memory Devices.  ADVANCED MATERIALS.  32,  17
  • (2020)  Work Function Engineering of Electrohydrodynamic-Jet-Printed PEDOT:PSS Electrodes for High-Performance Printed Electronics.  ACS APPLIED MATERIALS & INTERFACES.  12,  15
  • (2020)  Functionalized Organic Material Platform for Realization of Ternary Logic Circuit.  ACS APPLIED MATERIALS & INTERFACES.  12,  5
  • (2019)  Heterogeneous Integration of 2D Materials: Recent Advances in Fabrication and Functional Device Applications.  NANO.  14,  12
  • (2019)  Scalable Two-Dimensional Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo2C)/-Dichalcogenide (MoS2).  ACS APPLIED MATERIALS & INTERFACES.  11,  50
  • (2019)  Black phosphorus photodetector integrated with Au nanoparticles.  APPLIED PHYSICS LETTERS.  115,  18
  • (2019)  Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control.  NANOSCALE.  11,  44
  • (2019)  Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction.  NATURE COMMUNICATIONS.  10,  4701
  • (2019)  Large-Area MXene Electrode Array for Flexible Electronics.  ACS NANO.  13,  10
  • (2019)  Transition-Metal-Carbide (Mo2C) Multiperiod Gratings for Realization of High-Sensitivity and Broad-Spectrum Photodetection.  ADVANCED FUNCTIONAL MATERIALS.  29,  48
  • (2019)  Rhenium Diselenide (ReSe2) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique.  ADVANCED SCIENCE.  6,  21
  • (2019)  Avalanche Carrier Multiplication in Multilayer Black Phosphorus and Avalanche Photodetector.  SMALL.  15,  38
  • (2019)  Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors.  ACS NANO.  13,  8

Patent/Intellectual Property

  • PROTEIN-BASED NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME.  US 16/136,570 .  20200630.  UNITED STATES
  • 부성 미분 전달컨덕턴스 특성을 갖는 반도체 소자 및 그 제조방법.  10-2018-0148295.  20200625.  KOREA, REPUBLIC OF
  • ELECTRIC DEVICE BASED ON BLACK PHOSPHOROUS SINGLE CHANNEL WITH MULTI-FUNCTION AND METHOD OF MANUFACTURING THE SAME.  US 16/044,918.  20200331.  UNITED STATES
  • 도체-반도체 측면 이종접합구조, 이들의 제조방법, 이를 포함하는 스위칭 소자 및 이차원 전도성 박막의 제조방법.  10-2018-0081113.  20200122.  KOREA, REPUBLIC OF
  • 원자 스위칭 장치.  10-2017-0096005.  20200116.  KOREA, REPUBLIC OF
  • 비휘발성 메모리 소자 및 이의 제조방법.  10-2017-0057884.  20190801.  KOREA, REPUBLIC OF
  • 2차원 맥세인 박막의 제조방법.  10-2018-0013584.  20190401.  KOREA, REPUBLIC OF
  • 터널링 전계효과 트랜지스터.  10-2017-0085659.  20190401.  KOREA, REPUBLIC OF
  • 다기능성 단일 채널 흑린 기반 전자 소자 및 이의 제조 방법.  10-2017-0094933.  20190322.  KOREA, REPUBLIC OF
  • 단백질 기반의 비휘발성 메모리 소자 및 이의 제조 방법.  10-2017-0121355.  20190319.  KOREA, REPUBLIC OF
  • 2차원 박막 표면 처리 방법 및 이를 포함하는 전자 소자의 제조 방법.  10-2016-0025335.  20180727.  KOREA, REPUBLIC OF
  • Seamless hexagonal boron nitride atomic monolayer thin film and method of fabricating the same.  US20160237558A1.  20180508.  UNITED STATES
  • 2차원 맥세인 박막의 제조 방법.  10-2016-0025330.  20171204.  KOREA, REPUBLIC OF
  • Heterogeneous layered structure, method of preparing the heterogeneous layered structure, and electronic device including the heterogeneous layered structure.  US 20140264282.  20161206.  UNITED STATES
  • 그래핀을 이용한 논리소자와 그 제조 및 동작방법.  10-2012-0006412.  20150623.  KOREA, REPUBLIC OF

Honors / Awards

  • 국내외 주요학회 운영위원

Conference Paper

  • (2018)  Black Phosphorus p-Doping by Integration of MoS2 Nanoparticles.  ECS (Electrochemical Society).  UNITED STATES
  • (2018)  Synthesis of molybdenum carbide and formation of an epitaxial Mo2C/MoS2 hybrid structure via carburization of molybdenum disulfide.  ECS (Electrochemical Society).  UNITED STATES
  • (2016)  Integration of 2D Materials for Nanoelectronic Devices.  ICEM2016.  SINGAPORE
  • (2015)  Preparation and properties of hybrid 2-d materials.  IUMRS 2015.  KOREA, REPUBLIC OF
  • (2015)  Integration of heterogeneous 2D hybrid material systems and their applications.  ECS (Electrochemical Society) 2015.  UNITED STATES
  • (2015)  Preparation and properties of two-dimensional black phosphorus.  Nano Korea.  KOREA, REPUBLIC OF
  • (2015)  Thickness controlled synthesis of CVD hexagonal Boron Nitride films and their properties as a dielectric layer.  Nano Korea.  KOREA, REPUBLIC OF
  • (2015)  Two dimensional transition metal carbides: preparation and properties.  Nano Korea.  KOREA, REPUBLIC OF
  • (2015)  Synthesis of BN-doped mono layer graphene and its properties.  MRS (Material Research Society) 2015.  UNITED STATES
  • (2015)  Synthesis of layer-controlled large-area high-quality MoS2 films and their properties.  MRS (Material Research Society) 2015.  UNITED STATES
  • (2014)  Protein controlled doping of single layer graphene film.  International Conference on Microelectronics and Plasma Technology 2014.  KOREA, REPUBLIC OF
  • (2014)  Effects of substrate materials on the graphene-based device performances.  International Conference on Microelectronics and Plasma Technology 2014.  KOREA, REPUBLIC OF
  • (2014)  Towards the control of grain size and the continuous layer growth of 2-dimensional MoS2 film.  International Conference on Microelectronics and Plasma Technology 2014.  KOREA, REPUBLIC OF
  • (2014)  Formation of High Quality Hybrid h-BN/graphene Vertical Structure with Sequential CVD Process.  MRS 2014, Spring.  UNITED STATES
  • (2014)  Nondestructive Accurate Method to Probing Graphene Defects with Optical Microscopy.  MRS 2014, Spring.  UNITED STATES
  • (2013)  Nanoscale 2-dimensional hybrid structure of graphene/h-BN: synthesis, properties, and growth mechanism.  ENGE 2013 (Electronic Materials and Nanotechnology for Green Environment).  KOREA, REPUBLIC OF
  • (2013)  Characterization of graphene defects with optical microscope.  The 2nd International Workshop on Convergence in Condensed Matter and Nano Physics.  KOREA, REPUBLIC OF
  • (2013)  Chemical vapor deposition of 2-D Molybdenum Disulfide on surface treated SiO2 substrate.  The 2nd International Workshop on Convergence in Condensed Matter and Nano Physics.  KOREA, REPUBLIC OF
  • (2013)  Controlled doing of boron nitride in CVD grown graphene layer.  The 2nd International Workshop on Convergence in Condensed Matter and Nano Physics.  KOREA, REPUBLIC OF
  • (2013)  Protein controlled graphene doping.  The 2nd International Workshop on Convergence in Condensed Matter and Nano Physics.  KOREA, REPUBLIC OF