– Advanced nano scale materials and devices for future computing applications
– Synthesis and characterization of 0/1/2-D heterogeneous nano material systems
– Post-Si information processing/storage devices and optoelectronic devices
– Device physics and reliability of nano-electronic devices
– Research output highlights (as of March 2025):
• Authored >400 international refereed journal and conference papers
• Total Citations: 12,259 (Google Scholar)
• h-index: 61 (Google Scholar)
• Invited presentations at >70 international conferences
• Patent filed: >15 international patents, >40 domestic patents
Education
(Ph.D.) University of Texas at Austin, Electrical Engineering
(B.S) Seoul National University, Electrical Engineering
Experience
Professor, Sungkyunkwan University (2011-present)
Professor, National University of Singapore, NUS (2003-2011)
Researcher Fellow, AIST (Advanced Industrial Science and Technology), Japan (2002-2003)
Journal Articles
(2024)
One‐Shot Remote Integration of Macromolecular Synaptic Elements on a Chip for Ultrathin Flexible Neural Network System.
ADVANCED MATERIALS.
36,
51
(2023)
Dual-logic-in-memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure.
INFOMAT.
6,
2
(2023)
Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications.
ACS NANO.
17,
21
(2023)
Electronic and electrocatalytic applications based on solution-processed two-dimensional platinum diselenide with thickness-dependent electronic properties.
ECOMAT.
5,
8
(2023)
SnS/MoS2 van der Waals heterojunction for in-plane ferroelectric field-effect transistors with multibit memory and logic characteristics.
ECOMAT.
5,
5
(2023)
Intact Metal/Metal Halide van der Waals Junction Enables Reliable Memristive Switching with High Endurance.
ADVANCED FUNCTIONAL MATERIALS.
33,
14
(2022)
Extrapolation method for reliable measurement of Seebeck coefficient of organic thin films.
ORGANIC ELECTRONICS.
108,
(2022)
Enhanced Electromagnetic Absorption of Cement Composites by Controlling the Effective Cross-sectional Area of MXene Flakes with Diffuse Reflection Based on Carbon Fibers.
CONSTRUCTION AND BUILDING MATERIALS.
348,
-
(2022)
Broad-Spectrum Photodetection with High Sensitivity Via Avalanche Multiplication in WSe2.
ADVANCED OPTICAL MATERIALS.
10,
22
SUPER-STEEP SWITCHING DEVICE AND INVERTER DEVICE USING THE SAME.
18/598,689.
20250128.
UNITED STATES
超傾斜スイッチング素子及びこれを用いたインバータ素子.
2024-514727.
20241031.
JAPAN
2차원 물질 및 그 제조 방법.
10-2021-0112885.
20231017.
KOREA, REPUBLIC OF
부성 트랜스컨덕턴스 소자 및 이를 이용한 다치 메모리 소자.
10-2021-0145161.
20230612.
KOREA, REPUBLIC OF
NEGATIVE TRANSCONDUCTANCE DEVICE AND MULTI-VALUED INVERTER LOGIC DEVICE USING THE SAME.
17/095259.
20230314.
UNITED STATES
THREE-DIMENSIONAL SEMICONDUCTOR INTEGRATED CIRCUIT.
17/175839.
20221115.
UNITED STATES
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF.
17/666,448.
20220825.
UNITED STATES
Photodetector and Method of Manufacturing the Photodetector.
17/072,199.
20220614.
UNITED STATES
광검출 소자 및 이의 제조방법.
10-2019-0129496.
20220419.
KOREA, REPUBLIC OF
부성 트랜스컨덕턴스 소자 및 이를 이용한 다치 인버터 논리 소자.
10-2019-0143104.
20210827.
KOREA, REPUBLIC OF
부성 트랜스컨덕턴스 소자, 이를 이용한 부성 저항 소자 그리고 다치 논리 소자.
10-2019-0145250.
20210827.
KOREA, REPUBLIC OF
광 검출 장치, 이의 제조방법 및 이를 이용한 광 검출 방법.
10-2019-0141394.
20210624.
KOREA, REPUBLIC OF
3차원 반도체 집적 회로.
10-2020-0017291.
20210603.
KOREA, REPUBLIC OF
자기저항 구조체 및 그 제조 방법, 이를 구비하는 전자소자.
10-2013-0137885.
20210224.
KOREA, REPUBLIC OF
시냅스 소자 및 이의 제조 방법.
10-2019-0055291.
20210128.
KOREA, REPUBLIC OF
PROTEIN-BASED NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME.
US 16/136,570 .
20200630.
UNITED STATES
부성 미분 전달컨덕턴스 특성을 갖는 반도체 소자 및 그 제조방법.
10-2018-0148295.
20200625.
KOREA, REPUBLIC OF
ELECTRIC DEVICE BASED ON BLACK PHOSPHOROUS SINGLE CHANNEL WITH MULTI-FUNCTION AND METHOD OF MANUFACTURING THE SAME.
US 16/044,918.
20200331.
UNITED STATES
도체-반도체 측면 이종접합구조, 이들의 제조방법, 이를 포함하는 스위칭 소자 및 이차원 전도성 박막의 제조방법.
10-2018-0081113.
20200122.
KOREA, REPUBLIC OF
원자 스위칭 장치.
10-2017-0096005.
20200116.
KOREA, REPUBLIC OF
Honors / Awards
Associate Editor, InfoMat
Conference Paper
(2024)
2D Semiconductor Gate Stack and Implementation of Steep-Switching Impact Ionization Transistor.
MATERIALS RESEARCH SOCIETY.
UNITED STATES
(2024)
Bidirectional Polarization-Integrated Van Der Waals Ferroelectric Field-Effect Transistor for Multi-State Storage and Dual-Logic-in-Memory Computing.
ECS.
UNITED STATES
(2023)
Ultra-steep Switching Impact Ionization Field-effect Transistor Fabricated with Homogeneous WSe2 Junction.
IUMRS-International Conference on Materials & 11th International Conference on Materials for Advanced Technologies 2023.
SINGAPORE
(2018)
Black Phosphorus p-Doping by Integration of MoS2 Nanoparticles.
ECS (Electrochemical Society).
UNITED STATES
(2018)
Synthesis of molybdenum carbide and formation of an epitaxial Mo2C/MoS2 hybrid structure via carburization of molybdenum disulfide.
ECS (Electrochemical Society).
UNITED STATES
(2016)
Integration of 2D Materials for Nanoelectronic Devices.
ICEM2016.
SINGAPORE
(2015)
Preparation and properties of hybrid 2-d materials.
IUMRS 2015.
KOREA, REPUBLIC OF
(2015)
Integration of heterogeneous 2D hybrid material systems and their applications.
ECS (Electrochemical Society) 2015.
UNITED STATES
(2015)
Preparation and properties of two-dimensional black phosphorus.
Nano Korea.
KOREA, REPUBLIC OF
(2015)
Thickness controlled synthesis of CVD hexagonal Boron Nitride films and their properties as a dielectric layer.
Nano Korea.
KOREA, REPUBLIC OF
(2015)
Two dimensional transition metal carbides: preparation and properties.
Nano Korea.
KOREA, REPUBLIC OF
(2015)
Synthesis of BN-doped mono layer graphene and its properties.
MRS (Material Research Society) 2015.
UNITED STATES
(2015)
Synthesis of layer-controlled large-area high-quality MoS2 films and their properties.
MRS (Material Research Society) 2015.
UNITED STATES
(2014)
Protein controlled doping of single layer graphene film.
International Conference on Microelectronics and Plasma Technology 2014.
KOREA, REPUBLIC OF
(2014)
Effects of substrate materials on the graphene-based device performances.
International Conference on Microelectronics and Plasma Technology 2014.
KOREA, REPUBLIC OF
(2014)
Towards the control of grain size and the continuous layer growth of 2-dimensional MoS2 film.
International Conference on Microelectronics and Plasma Technology 2014.
KOREA, REPUBLIC OF
(2014)
Formation of High Quality Hybrid h-BN/graphene Vertical Structure with Sequential CVD Process.
MRS 2014, Spring.
UNITED STATES
(2014)
Nondestructive Accurate Method to Probing Graphene Defects with Optical Microscopy.
MRS 2014, Spring.
UNITED STATES
(2013)
Nanoscale 2-dimensional hybrid structure of graphene/h-BN: synthesis, properties, and growth mechanism.
ENGE 2013 (Electronic Materials and Nanotechnology for Green Environment).
KOREA, REPUBLIC OF
(2013)
Protein controlled graphene doping.
The 2nd International Workshop on Convergence in Condensed Matter and Nano Physics.
KOREA, REPUBLIC OF
