(Ph.D.) University of Texas at Austin, Electrical Engineering
Journal Articles
(2023)
Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications.
ACS NANO.
17,
21
(2023)
Electronic and electrocatalytic applications based on solution-processed two-dimensional platinum diselenide with thickness-dependent electronic properties.
ECOMAT.
5,
8
(2023)
SnS/MoS2 van der Waals heterojunction for in-plane ferroelectric field-effect transistors with multibit memory and logic characteristics.
ECOMAT.
5,
5
(2023)
Intact Metal/Metal Halide van der Waals Junction Enables Reliable Memristive Switching with High Endurance.
ADVANCED FUNCTIONAL MATERIALS.
33,
14
(2021)
Complementary Driving between 2D Heterostructures and Surface Functionalization for Surpassing Binary Logic Devices.
ACS APPLIED MATERIALS INTERFACES.
13,
7
(2021)
Fabrication of van der Waals heterostructures through direct growth of rhenium disulfide on van der Waals surfaces.
APPLIED SURFACE SCIENCE.
544,
-
(2021)
Modulation of the Electronic Properties of MXene (Ti3C2Tx) via Surface-Covalent Functionalization with Diazonium.
ACS NANO.
15,
1
(2020)
A-D-A Type Semiconducting Small Molecules with Bis(alkylsulfanyl)methylene Substituents and Control of Charge Polarity for Organic Field-Effect Transistors.
ACS APPLIED MATERIALS & INTERFACES.
12,
37
(2020)
MXenes for future nanophotonic device applications.
NANOPHOTONICS.
9,
7
(2020)
2D MXene-TiO2 Core-Shell Nanosheets as a Data-Storage Medium in Memory Devices.
ADVANCED MATERIALS.
32,
17
Patent/Intellectual Property
PROTEIN-BASED NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME.
US 16/136,570 .
20200630.
UNITED STATES
부성 미분 전달컨덕턴스 특성을 갖는 반도체 소자 및 그 제조방법.
10-2018-0148295.
20200625.
KOREA, REPUBLIC OF
ELECTRIC DEVICE BASED ON BLACK PHOSPHOROUS SINGLE CHANNEL WITH MULTI-FUNCTION AND METHOD OF MANUFACTURING THE SAME.
US 16/044,918.
20200331.
UNITED STATES
도체-반도체 측면 이종접합구조, 이들의 제조방법, 이를 포함하는 스위칭 소자 및 이차원 전도성 박막의 제조방법.
10-2018-0081113.
20200122.
KOREA, REPUBLIC OF
원자 스위칭 장치.
10-2017-0096005.
20200116.
KOREA, REPUBLIC OF
비휘발성 메모리 소자 및 이의 제조방법.
10-2017-0057884.
20190801.
KOREA, REPUBLIC OF
2차원 맥세인 박막의 제조방법.
10-2018-0013584.
20190401.
KOREA, REPUBLIC OF
터널링 전계효과 트랜지스터.
10-2017-0085659.
20190401.
KOREA, REPUBLIC OF
다기능성 단일 채널 흑린 기반 전자 소자 및 이의 제조 방법.
10-2017-0094933.
20190322.
KOREA, REPUBLIC OF
단백질 기반의 비휘발성 메모리 소자 및 이의 제조 방법.
10-2017-0121355.
20190319.
KOREA, REPUBLIC OF
2차원 박막 표면 처리 방법 및 이를 포함하는 전자 소자의 제조 방법.
10-2016-0025335.
20180727.
KOREA, REPUBLIC OF
Seamless hexagonal boron nitride atomic monolayer thin film and method of fabricating the same.
US20160237558A1.
20180508.
UNITED STATES
2차원 맥세인 박막의 제조 방법.
10-2016-0025330.
20171204.
KOREA, REPUBLIC OF
Heterogeneous layered structure, method of preparing the heterogeneous layered structure, and electronic device including the heterogeneous layered structure.
US 20140264282.
20161206.
UNITED STATES
그래핀을 이용한 논리소자와 그 제조 및 동작방법.
10-2012-0006412.
20150623.
KOREA, REPUBLIC OF
Honors / Awards
국내외 주요학회 운영위원
Conference Paper
(2018)
Black Phosphorus p-Doping by Integration of MoS2 Nanoparticles.
ECS (Electrochemical Society).
UNITED STATES
(2018)
Synthesis of molybdenum carbide and formation of an epitaxial Mo2C/MoS2 hybrid structure via carburization of molybdenum disulfide.
ECS (Electrochemical Society).
UNITED STATES
(2016)
Integration of 2D Materials for Nanoelectronic Devices.
ICEM2016.
SINGAPORE
(2015)
Preparation and properties of hybrid 2-d materials.
IUMRS 2015.
KOREA, REPUBLIC OF
(2015)
Integration of heterogeneous 2D hybrid material systems and their applications.
ECS (Electrochemical Society) 2015.
UNITED STATES
(2015)
Preparation and properties of two-dimensional black phosphorus.
Nano Korea.
KOREA, REPUBLIC OF
(2015)
Thickness controlled synthesis of CVD hexagonal Boron Nitride films and their properties as a dielectric layer.
Nano Korea.
KOREA, REPUBLIC OF
(2015)
Two dimensional transition metal carbides: preparation and properties.
Nano Korea.
KOREA, REPUBLIC OF
(2015)
Synthesis of BN-doped mono layer graphene and its properties.
MRS (Material Research Society) 2015.
UNITED STATES
(2015)
Synthesis of layer-controlled large-area high-quality MoS2 films and their properties.
MRS (Material Research Society) 2015.
UNITED STATES
(2014)
Protein controlled doping of single layer graphene film.
International Conference on Microelectronics and Plasma Technology 2014.
KOREA, REPUBLIC OF
(2014)
Effects of substrate materials on the graphene-based device performances.
International Conference on Microelectronics and Plasma Technology 2014.
KOREA, REPUBLIC OF
(2014)
Towards the control of grain size and the continuous layer growth of 2-dimensional MoS2 film.
International Conference on Microelectronics and Plasma Technology 2014.
KOREA, REPUBLIC OF
(2014)
Formation of High Quality Hybrid h-BN/graphene Vertical Structure with Sequential CVD Process.
MRS 2014, Spring.
UNITED STATES
(2014)
Nondestructive Accurate Method to Probing Graphene Defects with Optical Microscopy.
MRS 2014, Spring.
UNITED STATES
(2013)
Nanoscale 2-dimensional hybrid structure of graphene/h-BN: synthesis, properties, and growth mechanism.
ENGE 2013 (Electronic Materials and Nanotechnology for Green Environment).
KOREA, REPUBLIC OF
(2013)
Characterization of graphene defects with optical microscope.
The 2nd International Workshop on Convergence in Condensed Matter and Nano Physics.
KOREA, REPUBLIC OF
(2013)
Chemical vapor deposition of 2-D Molybdenum Disulfide on surface treated SiO2 substrate.
The 2nd International Workshop on Convergence in Condensed Matter and Nano Physics.
KOREA, REPUBLIC OF
(2013)
Controlled doing of boron nitride in CVD grown graphene layer.
The 2nd International Workshop on Convergence in Condensed Matter and Nano Physics.
KOREA, REPUBLIC OF
(2013)
Protein controlled graphene doping.
The 2nd International Workshop on Convergence in Condensed Matter and Nano Physics.
KOREA, REPUBLIC OF
