Ph.D. Semiconductor Physics University of Cambridge, UK 1993~1998
Thesis: “Magnetotransport in Low Dimensional Semiconductor Structures”
M.Ed. Physics Hanyang University, Korea 1990~1992
B.S. Physics Hanyang University, Korea 1981~1985
Experience
2002 - present, Professor, School of Electronic and Electrical Engineering, College of Information and Communication Engineering & Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University, Korea
1999 - 2002, Senior Researcher, Electronics and Telecommunications Research Institute (ETRI), Korea
Journal Articles
(2026)
Reconfigurable charge sensitivity in 65Zn-irradiated MoTe2 field-effect device.
SENSORS AND ACTUATORS A-PHYSICAL.
403,
(2025)
Enhanced Charge Carrier Transport in WSe2 Field-Effect Transistors via Monolayer MoS2 Tunneling Contacts.
ADVANCED MATERIALS TECHNOLOGIES.
11,
6
(2025)
Tellurium-Assisted Recrystallization of MoTe2 for Improved Electronic and Optoelectronic Properties.
ACS APPLIED ELECTRONIC MATERIALS.
7,
13
(2025)
Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures.
APPLIED PHYSICS LETTERS.
126,
13
(2025)
Nonsaturated large magnetoresistance and transport dynamics in a n-doped cryogenic WSe2 field-effect device.
PHYSICAL REVIEW B.
111,
12
(2025)
Spin-resolved tunneling into an atomic defect in MoS2.
PHYSICAL REVIEW B.
111,
4
(2025)
Spin-resolved tunneling into an atomic defect in MoS2.
PHYSICAL REVIEW B.
111,
4
(2024)
Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple-Gated Point Contact Device.
ADVANCED MATERIALS TECHNOLOGIES.
9,
12
(2023)
Doping-Free High-Performance Photovoltaic Effect in a WSe<sub>2</sub> Lateral <i>p-n</i> Homojunction Formed by Contact Engineering.
ACS APPLIED MATERIALS & INTERFACES.
15,
29
(2023)
Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moire-gapped graphene.
NATURE COMMUNICATIONS.
14,
1
(2022)
Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts.
SMALL.
18,
46
(2022)
Enhanced Performance of WS2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts.
SMALL.
18,
13
(2021)
Schottky Diode with Asymmetric Metal Contacts on WS2.
ADVANCED ELECTRONIC MATERIALS.
8,
3
(2021)
Signature of Spin-Resolved Quantum Point Contact in p-Type Trilayer WSe2 van der Waals Heterostructure.
NANO LETTERS.
21,
18
(2021)
Valley polarized conductance quantization in bilayer graphene narrow quantum point contact.
APPLIED PHYSICS LETTERS.
118,
26
Patent/Intellectual Property
나노소자 및 그의 제조 방법(NANODEVICES AND PREPARING METHOD OF THE SAME).
10-1090486-0000.
20111130.
KOREA, REPUBLIC OF
Conference Paper
(2022)
Single‐defect‐induced random telegraph signals in a molybdenum disulfide vertical transistor.
International Conference on the Physics of Semiconductors.
AUSTRALIA
(2019)
Schottky Barrier Height Modulation by ZnO Interlayer for High-Performance MoS2 Field-Effect Transistors.
The 5th International Conference on Advanced Electromaterials.
KOREA, REPUBLIC OF
(2019)
Basic quantum physics in two, one, and zero-dimensional semiconductor structures.
International Nathiagali Summer College on Physics and Contemporary Needs.
PAKISTAN
(2018)
Low Energy Oxygen Plasma Induced Modulation in Optoelectrical Properties of Atomically Thin Molybdenum
Disulfide Field Effect Transistors.
34th International Conference on the Physics of Semiconductors.
FRANCE
(2018)
Transport Properties of Dual Channel Transistor Based on Molybdenum Disulfide/Tungsten Diselenide
Heterostructure.
34th International Conference on the Physics of Semiconductors.
FRANCE
(2018)
Self-gating diode based on MoS2/h-BN heterostructure.
20th International Conference on Superlattices, Nanostructures and Nanodevices - ICSNN2018.
SPAIN
(2017)
E-beam lithography와 O2 플라즈마 식각 공정을 이용한
2차원 물질 나노 갭 형성.
한국물리학회.
KOREA, REPUBLIC OF
(2017)
산소 플라즈마 건식 식각을 이용한 선폭 감소 현상 연구.
한국물리학회.
KOREA, REPUBLIC OF
(2017)
Observation of Joule Heating Induced Negative Differential Resistance in Mesoscopic Graphene Oxide.
International Conference on Electronic Properties of Two Dimensional Systems.
UNITED STATES
(2017)
Junction-less Diode Enabled by Self-Bias Effect of Ion Gel in Single Layer MoS2 Device.
12th International Conference on the Structure of Surfaces.
UNITED STATES
(2016)
Oxygen Plasma Treatment Induced Improvement in the Device Properties of Hafnium Diselenide FETs.
International Conference on Chemical and Material Engineering.
KOREA, REPUBLIC OF
(2016)
Ambipolar field-effect transistor with atomically thin dual-channel of WSe2/MoS2 heterostructure.
33rd International COference on the Physics of Semiconductor.
CHINA
(2016)
Improved persistent photoconductivity in few-layer MoS2 FETs by graphene oxide functionalization.
33rd lnternational Conference on the Physics of Semiconductors (lCPS2016).
CHINA
(2016)
Conductance Control in VO2 Nanowires by Surface Doping with Gold Nanoparticles.
The 9th International Conference on Quantum Dots.
KOREA, REPUBLIC OF
(2015)
Ambipolar field-effect transistor with atomically thin dual-channel of WSe2/MoS2 heterostructure.
다산 컨퍼런스.
KOREA, REPUBLIC OF
(2015)
전기영동법을 이용한 그래핀에 부착되는 Au 나노입자의 위치제어 및 전기적 특성 연구.
2015 한국물리학회 가을 학술논문 발표회.
KOREA, REPUBLIC OF
(2015)
Electronic Transport Properties of HfSe2 Field Effect Transistors.
The International Union of Pure and Applied Physics.
JAPAN
(2015)
Electrical and Optical Characteristics of Graphene/MoS2 van der Waals Heterostructures with an Overlapped h-Boron Nitride.
Advanced in Functional Material.
UNITED STATES
(2014)
Temporal Behavior & Many-Body Effect on the Energy Relaxation of Photo-Generated Multi-Component Carriers in Wurtzite GaN.
International conference on the physics of semiconductor.
UNITED STATES
(2014)
Asymmetrical Metal & Graphene Contacts to MoS2 as a Gate-Tunable Two Dimensional Diode.
International conference on the physics of semiconductor.
UNITED STATES
