Next Generation Low-power Device Research; - Multi-valued Logic Devices (NDR/NDT-based MVL Devices/Circuits Integration) - Neuromorphic Devices (Synaptic/Neuronal Devices and 3D Integration) - Novel Devices for Process-In-Memory
2D Materials-based Research; - 2D Semiconductor Fabrication Technologies (Doping, Contact, and etc.) - 2D Semiconductor Applications (Photodetectors and Transistors)
Journal Articles
(2025)
Timing-Dependent Spiking Neural Network: Board-Level Hardware Implementation with Photoelectroactive Van der Waals Synapses.
ADVANCED MATERIALS.
38,
23
(2025)
Highly Tunable Synaptic Modulation in Photo-Activated Remote Charge Trap Memory for Hardware-Based Fault-Tolerant Learning.
ADVANCED MATERIALS.
38,
3
(2025)
Crack-Free Transfer of Wafer-Scale Freestanding Single-Crystalline Nanomembranes Enabled by Elastically Graded Polymer.
ADVANCED MATERIALS.
38,
1
(2025)
Artificial Optoelectronic Synapse Featuring Bidirectional Post-Synaptic Current for Compact and Energy-Efficient Neural Hardware.
ADVANCED MATERIALS.
37,
34
(2025)
Reconfigurable assembly of self-healing stretchable transistors and circuits for integrated systems.
NATURE ELECTRONICS.
8,
6
(2025)
Post-Treatment of Monolayer MoS2 Field-Effect Transistors with H2O Vapor: Alleviation of Remote Channel Doping.
ACS APPLIED MATERIALS & INTERFACES.
17,
3
(2024)
Growth-based monolithic 3D integration of single-crystal 2D semiconductors.
NATURE.
636,
8043
(2024)
Electron-Beam-Induced Negative Differential Transconductance Homojunction Device Based on van der Waals Materials for Functionally Complete Ternary Computing.
ACS NANO.
18,
52
(2024)
Opposite synaptic plasticity in oxidation-layer-controlled 2D materials-based memristors for mimicking heterosynaptic plasticity.
NANO TODAY.
59,
(2024)
Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors.
NANOSCALE HORIZONS.
9,
9
(2023)
Tactile Neuromorphic System: Convergence of Triboelectric Polymer Sensor and Ferroelectric Polymer Synapse.
ACS NANO.
17,
17
(2022)
Non-epitaxial single-crystal 2D material growth by geometrical confinement.
NATURE.
Patent/Intellectual Property
Semiconductor devices.
US20230290870A1.
20251125.
UNITED STATES
Super-steep switching device and inverter device using the same.
US20240096888A1.
20251125.
UNITED STATES
양방향 전류를 갖는 인공 시냅스 소자 및 이의 제조 방법과 동작 방법.
10-2024-0145466.
20251125.
KOREA, REPUBLIC OF
Photodetector and image sensor including the same.
US20220384500A1.
20250218.
UNITED STATES
Negative differential resistance device.
US20240079496A1.
20250121.
UNITED STATES
맥신 시냅스 장치.
10-2024-0068351.
20241107.
KOREA, REPUBLIC OF
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF.
US 2022/0271057 A1 .
20241015.
UNITED STATES
고집적 및 저전력화를 위한 아날로그 디지털 변환기 및 이를 이용한 아날로그 신호의 디지털
변환 방법.
10-2022-0068196.
20240731.
KOREA, REPUBLIC OF
트랜지스터 및 이의 제조방법.
10-2022-0128345.
20240329.
KOREA, REPUBLIC OF
NEURON DEVICE USING SPONTANEOUS POLARIZATION SWITCHING PRINCIPLE.
US 2020/0342300 A1.
20240305.
UNITED STATES
NEGATIVE DIFFERENTIAL RESISTANCE
DEVICE.
US 2022/0093803A1.
20230606.
UNITED STATES
TANDEM SOLAR CELLS HAVING A TOP OR BOTTOM METAL CHALCOGENIDE CELL.
US 2021/0359150A1 .
20230221.
UNITED STATES
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF.
US20210005710A1.
20221101.
UNITED STATES
NEGATIVE DIFFERENTIAL RESISTANCE Publication Classification
ELEMENT HAVING 3 - DIMENSION VERTICAL STRUCTURE.
US20200357988A1.
20220906.
UNITED STATES
다중 영미분 전달전도 특성을 갖는 반도체 소자 및 그 제조 방법.
10-2021-0005577.
20220706.
KOREA, REPUBLIC OF
MULTI - NEGATIVE DIFFERENTIAL TRANSCONDUCTANCE DEVICE AND METHOD OF PRODUCING THE SAME.
US20210111283A1.
20220510.
UNITED STATES
인공 시냅스 소자 및 이의 제조방법 (Artificial synaptic device and method for manufacturing the same).
10-2020-0119915.
20210907.
KOREA, REPUBLIC OF
반데르발스 힘을 이용한 박막 필름 전사 방법 (TRANSFER METHOD OF THIN FILMS USING VAN DER WAALS FORCE).
10-2018-0121014.
20210512.
KOREA, REPUBLIC OF
부성미분저항 소자 제조방법.
10-2019-0113760.
20210325.
KOREA, REPUBLIC OF
다중 부성미분 전달전도 특성 소자 및 그 제조방법.
10-2019-0127835.
20210225.
KOREA, REPUBLIC OF
Conference Paper
(2025)
Direct growth of WSe2 via chemical vapor deposition for p-type field-effect transistors.
International Conference on Advanced Electromaterials.
KOREA, REPUBLIC OF
(2025)
P-type Photoelectroactive Doping Effect in Optical Synaptic Device Using Oxygen Plasma-Treated h-BN.
International Conference on Advanced Electromaterials.
KOREA, REPUBLIC OF
(2025)
Thermally Induced Synthesis of the Ternary Phase Ni3In2Se2 from Ni Contacted InSe Nanosheets.
한국진공학회 하계정기학술대회.
KOREA, REPUBLIC OF
(2025)
MoS2/WSe2-based p-n Heterojunction Photo Diode with h-BN passivation.
전기전자재료학회 하계학술대회.
KOREA, REPUBLIC OF
(2025)
Enhancing Electrical Performance of 2D Semiconductor WSe2-Metal Junctions for Sustainable Electronics through HCl Surface Modification.
P-type Photoelectroactive Doping Effect in Optical Synaptic Device Using Oxygen Plasma-Treated h-BN.
UNITED STATES
(2025)
Development of Ferroelectric-semiconductor Heterostructure Devices for Neuromorphic Applications.
한국반도체학술대회.
KOREA, REPUBLIC OF
(2023)
BP-assisted formatin of vdW contact with MoS2.
AEFM 2023.
KOREA, REPUBLIC OF
(2023)
WSe2 FET with electron-beam-induced W-shaped I-V characteristic and its application to ternary NAND gate.
7th IEEE Electron Devices Technology and Manufacturing Conference.
KOREA, REPUBLIC OF
(2020)
MoSe2/ReS2 Vertical Heterostructures for High-efficiency Photovoltaics.
한국진공학회- 하계정기학술대회.
KOREA, REPUBLIC OF
(2020)
N-type Doping Technique using PPh3 based on TMDs.
한국진공학회- 하계정기학술대회.
KOREA, REPUBLIC OF
(2020)
Controllable photoacid diffusion using external electric field.
한국진공학회- 하계정기학술대회.
KOREA, REPUBLIC OF
(2020)
Artificial VdW Synapse based on WS2 for Brain-inspired Computing.
Nano Korea 2020.
KOREA, REPUBLIC OF
(2020)
High photovoltaic effect in vertical multilayer ReS2/MoSe2 heterostructures.
Nano Korea 2020.
KOREA, REPUBLIC OF
(2020)
Light-Induced Negative Differential Transconductance based on Partial Gate Technology.
Nano Korea 2020.
KOREA, REPUBLIC OF
(2019)
High-performance tunsten diselenide (WSe2)-based photodetector enhanced by HCl treatment.
The 11th International Conference on Advanced Materials and Devices.
KOREA, REPUBLIC OF
(2019)
Oxygen Plasma-based P-type Doping on Hafnium Disulfide.
The 11th International Conference on Advanced Materials and Devices.
KOREA, REPUBLIC OF
(2019)
Artificial Synapse based on 2D Van der Waals Heterostructure.
The 11th International Conference on Advanced Materials and Devices.
KOREA, REPUBLIC OF
(2019)
2D Material based Lateral Synaptic Device using Ion Gel Gating.
제57회 한국진공학회 하계.
KOREA, REPUBLIC OF
(2019)
Artificial Optic-Neural Synapse for Colored and Color-Mixed Pattern Recongnition.
제26회 한국반도체학술대회.
KOREA, REPUBLIC OF
(2019)
Artificial Synaptic Device based on Ferroelectric Polymer Capacitor.
제26회 한국반도체학술대회.
KOREA, REPUBLIC OF
