• Development of Next-Generation Semiconductor Logic and Memory Materials/Devices
• Fabrication Technologies for Ultrathin Nanomaterials and Hybrid Heterostructures
• Development of Future ICT Devices for Information Processing, Storage, and Transmission Using Novel Functional Nanomaterials
• Development of Electronic and Optoelectronic Devices Based on New Operating Principles

• (Ph.D.) University of Texas at Austin, Electrical Engineering
• (B.S) Seoul National University, Electrical Engineering

• Senior Researcher (1989–1997), Central Research Institute, Samsung Electro-Mechanics
• Visiting/Research Scientist (2002–2003), National Institute of Advanced Industrial Science and Technology (AIST), Japan
• Professor (2003–2011), Department of Electrical Engineering, National University of Singapore

• (2024) One‐Shot Remote Integration of Macromolecular Synaptic Elements on a Chip for Ultrathin Flexible Neural Network System. ADVANCED MATERIALS. 36, 51
• (2024) Reconfigurable sequential-logic-in-memory implementation utilizing ferroelectric field-effect transistor. ACS NANO. 1, 1
• (2024) Carrier type and density dependence of impact ionization characteristics in WSe2. NANOSCALE. 1, 1
• (2024) Spiking neural network integrated with impact ionization field-effect transistor neuron and a ferroelectric field-effect transistor synapse. ADVANCED MATERIALS. 1, 1
• (2024) Ferroelectric Stochasticity in 2D CuInP2S6 and Its Application for True Random Number Generator. ADVANCED MATERIALS. 1, 1
• (2024) High-r Dielectric (Hf02)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices. ADVANCED MATERIALS. 26, 2312747
• (2023) Dual-logic-in-memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure. INFOMAT. 6, 2
• (2023) Artificial Visual Systems Fabricated with Ferroelectric van der Waals Heterostructure for In-Memory Computing Applications. ACS NANO. 17, 21
• (2023) Electronic and electrocatalytic applications based on solution-processed two-dimensional platinum diselenide with thickness-dependent electronic properties. ECOMAT. 5, 8
• (2023) SnS/MoS2 van der Waals heterojunction for in-plane ferroelectric field-effect transistors with multibit memory and logic characteristics. ECOMAT. 5, 5
• (2023) Intact Metal/Metal Halide van der Waals Junction Enables Reliable Memristive Switching with High Endurance. ADVANCED FUNCTIONAL MATERIALS. 33, 14
• (2023) A steep-switching impact ionization-based threshold switching field-effect transistor. NANOSCALE. 15, 12
• (2023) Anisotropy of impact ionization in WSe2 field effect transistors. NANO CONVERGENCE. 10, 1
• (2022) Pulsed gate voltage measurement for charge mobility extraction of organic transistors. ORGANIC ELECTRONICS. 110
• (2022) Novel Dithienopyrrole-Based Conjugated Copolymers: Importance of Backbone Planarity in Achieving High Electrical Conductivity and Thermoelectric Performance. MACROMOLECULAR RAPID COMMUNICATIONS. 43, 19
• (2022) A steep switching WSe2 impact ionization field-effect transistor. NATURE COMMUNICATIONS. 13, 1
• (2022) Extrapolation method for reliable measurement of Seebeck coefficient of organic thin films. ORGANIC ELECTRONICS. 108
• (2022) Enhanced Electromagnetic Absorption of Cement Composites by Controlling the Effective Cross-sectional Area of MXene Flakes with Diffuse Reflection Based on Carbon Fibers. CONSTRUCTION AND BUILDING MATERIALS. 348, -
• (2022) Broad-Spectrum Photodetection with High Sensitivity Via Avalanche Multiplication in WSe2. ADVANCED OPTICAL MATERIALS. 10, 22
• (2022) Single-Crystalline Pyramidal TiCxParticles Grown by Biphase Diffusion Synthesis. ACS NANO. 16, 5

• Super-Steep Switching Device and Inverter Device Using the Same. Application No. 18/598,689, Jan 28, 2025, United States
• 超傾斜スイッチング素子及びこれを用いたインバータ素子. Application No. 2024-514727, Oct 31, 2024, Japan
• Two-Dimensional Material and Method for Manufacturing the Same. Application No. 10-2021-0112885, Oct 17, 2023, Republic of Korea
• Negative Transconductance Device and Multi-Valued Memory Device Using the Same. Application No. 10-2021-0145161, Jun 12, 2023, Republic of Korea
• Negative Transconductance Device and Multi-Valued Inverter Logic Device Using the Same. Application No. 17/095,259, Mar 14, 2023, United States
• Three-Dimensional Semiconductor Integrated Circuit. Application No. 17/175,839, Nov 15, 2022, United States
• Semiconductor Memory Device and Operating Method Thereof. Application No. 17/666,448, Aug 25, 2022, United States
• Photodetector and Method of Manufacturing the Photodetector. Application No. 17/072,199, Jun 14, 2022, United States
• Photodetector and Method for Manufacturing the Same. Application No. 10-2019-0129496, Apr 19, 2022, Republic of Korea
• Negative Transconductance Device and Multi-Valued Inverter Logic Device Using the Same. Application No. 10-2019-0143104, Aug 27, 2021, Republic of Korea
• Negative Transconductance Device, Negative Resistance Device Using the Same, and Multi-Valued Logic Device. Application No. 10-2019-0145250, Aug 27, 2021, Republic of Korea
• Photodetection Device, Method for Manufacturing the Same, and Photodetection Method Using the Same. Application No. 10-2019-0141394, Jun 24, 2021, Republic of Korea
• Three-Dimensional Semiconductor Integrated Circuit. Application No. 10-2020-0017291, Jun 3, 2021, Republic of Korea
• Magnetoresistive Structure and Method for Manufacturing the Same, and Electronic Device Including the Same. Application No. 10-2013-0137885, Feb 24, 2021, Republic of Korea
• Synaptic Device and Method for Manufacturing the Same. Application No. 10-2019-0055291, Jan 28, 2021, Republic of Korea
• Protein-Based Nonvolatile Memory Device and Method for Manufacturing the Same. Application No. US 16/136,570, Jun 30, 2020, United States
• Semiconductor Device Having Negative Differential Transconductance Characteristics and Method for Manufacturing the Same. Application No. 10-2018-0148295, Jun 25, 2020, Republic of Korea
• Electric Device Based on Black Phosphorus Single Channel with Multifunction and Method of Manufacturing the Same. Application No. US 16/044,918, Mar 31, 2020, United States
• Conductor–Semiconductor Lateral Heterojunction Structure, Method for Manufacturing the Same, Switching Device Including the Same, and Method for Manufacturing a Two-Dimensional Conductive Thin Film. Application No. 10-2018-0081113, Jan 22, 2020, Republic of Korea
• Atomic Switching Device. Application No. 10-2017-0096005, Jan 16, 2020, Republic of Korea

• Steering Committee Member of Major Domestic and International Academic Societies

• (2024) 2D Semiconductor Gate Stack and Implementation of Steep-Switching Impact Ionization Transistor. Materials Research Society (MRS), United States
• (2024) Bidirectional Polarization-Integrated Van der Waals Ferroelectric Field-Effect Transistor for Multi-State Storage and Dual Logic-in-Memory Computing. Electrochemical Society (ECS), United States
• (2023) Ultra-Steep Switching Impact Ionization Field-Effect Transistor Fabricated with Homogeneous WSe₂ Junction. IUMRS–International Conference on Materials & 11th International Conference on Materials for Advanced Technologies 2023, Singapore
• (2018) Black Phosphorus p-Doping by Integration of MoS₂ Nanoparticles. Electrochemical Society (ECS), United States
• (2018) Synthesis of Molybdenum Carbide and Formation of an Epitaxial Mo₂C/MoS₂ Hybrid Structure via Carburization of Molybdenum Disulfide. Electrochemical Society (ECS), United States
• (2016) Integration of Two-Dimensional Materials for Nanoelectronic Devices. ICEM 2016, Singapore
• (2015) Preparation and Properties of Hybrid Two-Dimensional Materials. IUMRS 2015, Republic of Korea
• (2015) Integration of Heterogeneous Two-Dimensional Hybrid Material Systems and Their Applications. Electrochemical Society (ECS) 2015, United States
• (2015) Preparation and Properties of Two-Dimensional Black Phosphorus. Nano Korea 2015, Republic of Korea
• (2015) Thickness-Controlled Synthesis of CVD Hexagonal Boron Nitride Films and Their Properties as a Dielectric Layer. Nano Korea 2015, Republic of Korea
• (2015) Two-Dimensional Transition Metal Carbides: Preparation and Properties. Nano Korea 2015, Republic of Korea
• (2015) Synthesis of BN-Doped Monolayer Graphene and Its Properties. Materials Research Society (MRS) 2015, United States
• (2015) Synthesis of Layer-Controlled, Large-Area, High-Quality MoS₂ Films and Their Properties. Materials Research Society (MRS) 2015, United States
• (2014) Protein-Controlled Doping of Single-Layer Graphene Films. International Conference on Microelectronics and Plasma Technology 2014, Republic of Korea
• (2014) Effects of Substrate Materials on Graphene-Based Device Performance. International Conference on Microelectronics and Plasma Technology 2014, Republic of Korea
• (2014) Towards Control of Grain Size and Continuous Layer Growth of Two-Dimensional MoS₂ Films. International Conference on Microelectronics and Plasma Technology 2014, Republic of Korea
• (2014) Formation of High-Quality Hybrid h-BN/Graphene Vertical Structures via Sequential CVD Processes. Materials Research Society (MRS) 2014 Spring Meeting, United States
• (2014) Nondestructive and Accurate Probing of Graphene Defects Using Optical Microscopy. Materials Research Society (MRS) 2014 Spring Meeting, United States
• (2013) Nanoscale Two-Dimensional Hybrid Structures of Graphene/h-BN: Synthesis, Properties, and Growth Mechanism. ENGE 2013 (Electronic Materials and Nanotechnology for Green Environment), Republic of Korea
• (2013) Protein-Controlled Graphene Doping. 2nd International Workshop on Convergence in Condensed Matter and Nano Physics, Republic of Korea