2026 Summer SAINT–Nano Engineering Graduation

Celebrating Undergraduate & Graduate Commencement at SAINT SQUARE1. Date & Time: Monday, August 24, 2026, 11:00 AM–1:00 PM2. Venue: SAINT SQUARE, 2nd Research Complex3. Program: Degree Conferment Ceremony & Photo Session, Buffet Lunch   - Prof. Yong-Ho Kim, Chair of the Department of Nano Engineering, and Prof. Sung-Pil Ahn delivered congratulatory remarks.   - Dr. Sung-Sik Shin, representing the graduate students, and Mr. Si Park, representing the undergraduate students, delivered responses on behalf of the graduates. 

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SAINT Students Wins Grand Prize in SEMES Project

Prof. Sung-Pil Ahn’s Lab at SAINT, received the Grand Prize at the “SEMES–SKKU Strategic Industry-Academia Achievement Exchange Meeting” held on August 11.The event was organized to share the outcomes of strategic industry-academia collaboration projects between SEMES and Sungkyunkwan University, featuring the final presentations of the third-year research projects.At this year’s exchange meeting, Prof. Sung-Pil Ahn’s Lab presented its research on “Analysis of Instability in the Wet-Cleaning Process Caused by Electromagnetic Induction.” In this study, the team analyzed sine-wave electric field signals observed during the semiconductor wet-cleaning process by comparing electric and magnetic field data, and proposed a mechanism for the generation of the observed waveform.This award recognizes the outstanding research achievements and practical contributions of the team in strategic industry-academia collaboration.

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SAINT and Thailand’s NANOTEC Open a New Chapter in Their Long-Standing Partnership

SAINT and Thailand’s National Nanotechnology Center (NANOTEC), under the National Science and Technology Development Agency (NSTDA), signed a Memorandum of Understanding (MOU) on July 8, 2026, at Thailand Science Park, marking a new chapter in their long-standing partnership. SAINT and NANOTEC have maintained a close relationship for many years, building strong ties through continued academic and research exchanges. The new MOU represents an important transition from this long-established relationship toward a broader and more strategic research partnership. Under the renewed framework, the two institutions will expand collaboration in key research areas including sensors and biosensors, advanced functional materials, sustainable energy technologies, environmental nanotechnology, and photonics. The partnership will also promote joint research projects, researcher exchanges, academic activities, and opportunities to pursue internationally funded collaborative programs. Building on years of mutual trust and cooperation, SAINT and NANOTEC aim to develop a more sustainable research and innovation network between Korea and Thailand and create new opportunities for collaboration in emerging fields of nanotechnology.

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SAINT Prof. Jisang Park Contributes to Breakthrough in High-Performance, Air-Stable Perovskite Transistors

Professor Ji-sang Park of SAINT has contributed to a collaborative research breakthrough that significantly improves both the performance and stability of tin-based perovskite transistors. The findings were published in Nature.The research was led by Professor Yong-Young Noh’s team at POSTECH in collaboration with Professor Jisang Park’s team at Sungkyunkwan University and research teams led by Professors Ao Liu and Huihui Zhu at the University of Electronic Science and Technology of China (UESTC).Tin-based perovskites have attracted significant attention as promising materials for high-performance p-type transistors. However, their practical application has been limited by poor air stability: unreacted tin ions (Sn²⁺) on the material surface readily oxidize when exposed to air, creating defects that rapidly degrade device performance.To address this challenge, the researchers developed a “volatile surface reconstruction” strategy. By treating the surface of a cesium–tin–iodide semiconductor with potassium acetate, residual tin ions are converted into volatile tin acetate and removed from the surface. At the same time, potassium iodide forms naturally in the resulting vacancies, creating a protective layer against the external environment.The resulting p-type perovskite transistors achieved hole mobilities exceeding 50 cm²/V·s and on/off current ratios above 10⁸, representing world-leading device performance. The devices also demonstrated substantially improved stability, remaining operational for more than four hours in ambient air and maintaining their initial performance for over a month under accelerated aging conditions at 100°C.The breakthrough could open new possibilities for high-performance electronic technologies, including vertically stacked DRAM for AI computing, next-generation display driving circuits, wearable electronics, and highly integrated semiconductor devices.

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