[LECTURE] SPECIAL LECTURE(Dec.04 Thu. 16:00) (Joonki Suh, KAIST)
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Date 26-04-27 19:10Main Text
12/04(목) 전문가초청특강은 KAIST 서준기 교수님을 모시고 진행합니다.
관심있는 분들의 많은 참석 부탁드립니다.
ㅁ주제: Atomically Thin Semiconductors for Nanoelectronics:
Advances in Materials, Processing and Intelligent Computing
ㅁ일시: 12/04 (목) 16:00
ㅁ장소: 제2종합연구동 83188호
ㅁ약력:
Prof. Joonki Suh is an associate professor in Department of Chemical and Biomolecular
Engineering at Korea Advanced Institute of Science and Technology (KAIST) where he is leading
a research group in a new class of atomically-thin semiconductors and non-volatile memory
devices. He graduated from Yonsei University in 2006, and then received a M.S. from Stanford
University and a Ph.D. from the University of California, Berkeley, respectively. His doctoral
research focused on defect and device physics in chalcogenide semiconductors including phasechange
materials and 2D transition metal dichalcogenides. Prior to the current position, he worked
as an assistant/associate professor in Ulsan National Institute of Science and Technology (UNIST)
for six years.
ㅁ초록:
The relentless pursuit of data processing and storage density by modern information technology
is pushing electronics from planar to complex three-dimensional architectures. This talk will
highlight how atomically thin semiconductors can be seamlessly integrated into these nextgeneration
device geometries to enable advanced logic and memory operations. We introduce lowtemperature,
vapor-phase deposition techniques, including atomic layer deposition (ALD) and
metal-organic chemical vapor deposition (MOCVD), as an “integrated” solution for fabricating
these materials in a scalable manner. First, a phase-centric MOCVD strategy for wafer-scale tin
selenides (SnSe and SnSe2) enables steep-slope, low-power logic transistors. Next, an annealingfree
ALD process for monoelemental tellurium (Te) thin films yields high-performance selector
devices with fast switching time, selectivity and low Vth. Finally, we will conclude by showcasing
the latest research in building BEOL-compatible neuromorphic hardware with these synthetic
chalcogenide thin films.
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