04/02 (목) 전문가초청특강은 건국대학교 정현종 교수님을 모시고 진행합니다.

관심있는 분들의 많은 참석 부탁드립니다.

ㅁ주제: No transistor for sensors

ㅁ일시: 04/02 (목) 16:00

ㅁ장소: 제2종합연구동 83188호

ㅁ약력: 

  → Research Interest
     1. Graphene-based electronics: Invention of graphene barristor and investigation of the device physics.
     2. Scanning probe microscopy: Scanning gate microscopy study on a tunable Schottky junction.
     3. Barristor-based sensor platform: Investigation of the barristor-based sensors, including biosensors,
        photodetectors, and gas sensors.
  → Education
     February 2005 Ph.D., Physics, Seoul National University, Seoul, Korea
              "Metal-Polypyrrole-Metal Nanowire: Growth, Structure, and Transport" (Advisor: Young Kuk)
     February 1999 M.S., Physics, Seoul National University, Seoul, Korea (Advisor: Young Kuk)
     February 1997 B.S., Physics, Seoul National University, Seoul, Korea
  → Employment
     March 2023 – Present  :  Professor at Konkuk University
     February 2022 – Present  :  CEO at A Barristor Company
     March 2017 – Feburary 2023  : Associate Professor at Konkuk University
     March 2013 – February 2017  :  Assistant Professor at Konkuk University
     August 2006 – February 2013  :  Research Staff Member at Samsung Advanced Institute of Technology
     December 2005 – July 2006  :  Postdoctoral Researcher at The Center for Atomic Control of Heteroepitaxy,
                            Korea Research Institute of Standards and Science
     March 2005 – November 2005  :  Postdoctoral Researcher at the Center for Science in Nanometer Scale in the
                            Inter-University Semiconductor Research Center, Seoul National University.
     March 1999 – April 2001  :  Research Assistant at Inter-university Semiconductor Research Center, Seoul National                                University.

ㅁ초록:

Traditional field-effect transistors (FETs) fail at high-sensitivity sensing due to a fundamental structural mismatch: a channel-dominant architecture struggling against sparse modulation. In a FET, current is measured across a lateral channel; when a target event (e.g., a single molecule) perturbs only a tiny local region, the unaffected "dark" areas dominate the total conductance, severely diluting the signal. Resistor-network models demonstrate that even a ~10% local change results in a capped ~11% global response, while low-coverage regimes exhibit unreliable, non-proportional percolation behavior.
Even Graphene FETs (GFETs) are constrained by this "channel-average" limit. To achieve reliable sparse signal detection, we propose a paradigm shift from long-channel averages to a Junction/Barrier-based architecture, where the sensing event directly gates the current-setting element. Unlike GFETs, this Barristor (Barrier-Transistor) architecture [1] enables an exponential response to local perturbations by modulating the potential barrier height, offering a 100 times greater response.
 This approach is particularly critical for early-stage disease diagnostics and ultra-low concentration gas sensing, where target molecules are inherently sparse. In this talk, we introduce the Graphene Barristor as a solution to the structural bottlenecks of FETs and discuss the emerging ecosystem.